Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 5.217 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
DC Current Gain hFE Max: 120 at 150 mA, 10 VDC
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 120 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 40 at 150 mA, 10 VDC
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 5 V
