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Width: 3.9 mm
Height: 1.65 mm
Length: 4.9 mm
Fall Time: 15 ns, 10 ns
Rise Time: 15 ns, 10 ns
Technology: Si
Unit Weight: 74 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 10 ns, 15 ns
Id - Continuous Drain Current: 350 mA, 240 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 60 Ohms, 125 Ohms
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 4 V, 4.5 V
