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Gain: 13 dB
Fall Time: 3 ns
Rise Time: 3.1 ns
Technology: Si
Unit Weight: 38 g
Channel Mode: Enhancement
Output Power: 90 W
Mounting Style: Through Hole
Operating Frequency: 120 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 165 W
Vgs - Gate-Source Voltage: + 30 V
Operating Temperature Range: - 55 C to + 150 C
Id - Continuous Drain Current: 9 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 mS
Vds - Drain-Source Breakdown Voltage: 450 V
Vgs th - Gate-Source Threshold Voltage: 5 V
