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Technology: Si
Unit Weight: 12.798 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 60 at 150 mA, 10 VDC
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 20 at 150 mA, 10 VDC
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 1.5 V
