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Fall Time: 21.4 ns
Rise Time: 18.6 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 1.2 nC, 1.4 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 350 mW
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 3.2 ns
Typical Turn-Off Delay Time: 8.3 ns
Id - Continuous Drain Current: 520 mA, 750 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 250 mOhms, 2 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
