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Density: 1 Gbit
Package: 48TSOP
Mounting: Surface Mount
Rad Hard: No
Cell Type: NAND
Pin Count: 48
Boot Block: No
Interfaces: Parallel
Access Time: 25 ns
IC Mounting: Surface Mount
No. of Pins: 48
Timing Type: Asynchronous
Architecture: Sectored
Organization: 128M x 8
Interface Type: Parallel
Memory Density: 1 Gbit
Number of Words: 128 Mbit
Program Current: 20 mA
Screening Level: Industrial
Supplier Package: TSOP
Flash Memory Type: NAND
Block Organization: Symmetrical
Maximum Erase Time: 6/Block s
Product Dimensions: 12 x 18.4 x 1 mm
Supply Voltage Max: 3.6 V
Supply Voltage Min: 2.7 V
Supply Voltage Nom: 3 V
Programming Voltage: 2.7 to 3.6 V
Memory Configuration: 128M x 8bit
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 8 Bit
Maximum Programming Time: 700/Page us
Maximum Operating Current: 30 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 25 us
Simultaneous Read/Write Support: No
Maximum Operating Supply Voltage: 3.6 V
Minimum Operating Supply Voltage: 2.7 V
Typical Operating Supply Voltage: 3 V
Erase Suspend/Resume Modes Support: No
