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Technology: Si
Carrier Life: 10 ns
If - Forward Current: 10 mA
Ir - Reverse Current: 10 uA
Vr - Reverse Voltage: 35 V
Maximum Diode Capacitance: 0.2 pF
Maximum Operating Frequency: 18 GHz
Minimum Operating Frequency: 10 MHz
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Maximum Series Resistance @ Maximum IF: 2.1 Ohms
