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Gain: 16.1 dB
Technology: GaN
Output Power: 250 W
Configuration: Single
Mounting Style: Screw Mount
Development Kit: CGHV40200PP-AMP1
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 166 W
Maximum Operating Frequency: 1.9 GHz
Minimum Operating Frequency: 1.7 GHz
Id - Continuous Drain Current: 8.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
