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Gain: 20.3 dB
Technology: GaN
Unit Weight: 25.676 g
Output Power: 180 W
Mounting Style: Screw Mount
Development Kit: CGHV40180F-TB1
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 150 W
Maximum Operating Frequency: 1 GHz
Minimum Operating Frequency: 50 MHz
Id - Continuous Drain Current: 18 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Vds - Drain-Source Breakdown Voltage: 125 V
Vgs th - Gate-Source Threshold Voltage: - 3.8 V
