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Type: Power MOSFET
Polarity: N
Gate Charge (Qg): 180nC
Power consumption: 360W
Circuit configuration: Single
Drain to Source voltage: 100V
Continuous drain current: 100A
Operating temperature range: -40 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 15mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
