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Fall Time: 52 ns
Rise Time: 54 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Depletion
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 12.7 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 60 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 28 ns
Typical Turn-Off Delay Time: 35 ns
Id - Continuous Drain Current: 800 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 340 mS
Rds On - Drain-Source Resistance: 4.6 Ohms
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
