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Width: 5.21 mm
Height: 26.42 mm
Length: 20.29 mm
Fall Time: 31 ns
Rise Time: 54 ns
Technology: Si
Unit Weight: 6.500 g
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: Through Hole
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 150 W
Typical Turn-On Delay Time: 33 ns
Typical Turn-Off Delay Time: 42 ns
Id - Continuous Drain Current: 200 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 7.4 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
