Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 5.13 mm
Height: 26.16 mm
Length: 19.96 mm
Fall Time: 33 ns
Rise Time: 27 ns
Technology: Si
Unit Weight: 10 g
Channel Mode: Enhancement
Mounting Style: Through Hole
Qg - Gate Charge: 196 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 890 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 37 ns
Typical Turn-Off Delay Time: 95 ns
Id - Continuous Drain Current: 32 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 21 S
Rds On - Drain-Source Resistance: 350 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4 V
