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Width: 5.13 mm
Height: 26.16 mm
Length: 19.96 mm
Technology: Si
Unit Weight: 10.600 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 1.7 kW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 500 A
