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Rise Time: 300 ns
Technology: Si
Unit Weight: 10 g
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 140 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1 kW
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 32 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 270 mOhms
Vds - Drain-Source Breakdown Voltage: 800 V
