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Technology: Si
Unit Weight: 10.117 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 5 mA
Forward Transconductance - Min: 3 mS
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 15 V
