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Technology: Si
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: 2 V
Drain-Source Current at Vgs=0: 18 mA
Id - Continuous Drain Current: 10 mA
Maximum Operating Temperature: + 135 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6 mS
Vgs - Gate-Source Breakdown Voltage: - 30 V
