Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 2 V
Vgs (Max): 10V
Gate Charge (Qg): 50nC
Power consumption: 130W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 40V
Continuous drain current: 59A
Input Capacitance (Ciss): 2190pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 18mOhm
Drive Voltage (Max Rds On, Min Rds On): 5|10V
