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Fall Time: 4 ns
Rise Time: 2 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1-N Channel
Qg - Gate Charge: 29 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 89 W
Vgs - Gate-Source Voltage: - 7 V, + 7 V
Typical Turn-On Delay Time: 9 ns
Typical Turn-Off Delay Time: 21 ns
Id - Continuous Drain Current: 58 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 85 S
Rds On - Drain-Source Resistance: 570 uOhms
Vds - Drain-Source Breakdown Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
