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Fall Time: 14 ns
Rise Time: 3 ns
Technology: Si
Unit Weight: 324 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 42 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 58 W
Vgs - Gate-Source Voltage: - 16 V, + 5 V
Typical Turn-On Delay Time: 7 ns
Typical Turn-Off Delay Time: 45 ns
Id - Continuous Drain Current: 45 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 13.1 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
