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Infineon IGT60R190D1SATMA1 Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R | EMIN.CO.ID

GaN FETs
Infineon IGT60R190D1SATMA1 Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R

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Infineon IGT60R190D1SATMA1 Transistor MOSFET N-CH 600V 12.5A 8-Pin HSOF T/R

ManufacturerInfineon(View more products from this manufacturer)

ModelIGT60R190D1SATMA1

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No. of Pins: 8

Transistor Mounting: Surface Mount

Typical Gate Charge: 3.2

Transistor Case Style: HSOF

Drain Source Voltage Vds: 600

Continuous Drain Current Id: 12.5

Drain Source On State Resistance: 190

Datasheet

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