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Infineon IGLD60R190D1AUMA3 GaN FETs HV GAN DISCRETES | EMIN.CO.ID

GaN FETs
Infineon IGLD60R190D1AUMA3 GaN FETs HV GAN DISCRETES

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Infineon IGLD60R190D1AUMA3 GaN FETs HV GAN DISCRETES

ManufacturerInfineon(View more products from this manufacturer)

ModelIGLD60R190D1AUMA3

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Easy change and return

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Technology: GaN

REACH - SVHC: Details

Moisture Sensitive: Yes

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Vds - Drain-Source Breakdown Voltage: 600 V

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