Infineon FZ750R65KE3P2NOSA1 Highly Insulated Modules IHV IHM T
ManufacturerInfineon(View more products from this manufacturer)
ModelFZ750R65KE3P2NOSA1
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Technology: Si
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 3 MW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 50 C
Collector- Emitter Voltage VCEO Max: 6.5 kV
Collector-Emitter Saturation Voltage: 3.7 V
Continuous Collector Current at 25 C: 1.5 kA
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