Infineon FS3L50R07W2H3_B11 IGBT Silicon Modules 650 V, 50 A 3-level IGBT module
ManufacturerInfineon(View more products from this manufacturer)
ModelFS3L50R07W2H3_B11
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Technology: Si
Unit Weight: 39 g
Configuration: 3-Phase Inverter
Pd - Power Dissipation: 215 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.45 V
Continuous Collector Current at 25 C: 75 A
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