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Infineon FS3L200R10W3S7FB11BPSA1 SiC IGBT Modules 950 V, 200 A 3-level IGBT module | EMIN.CO.ID

Discrete & Power Modules
Infineon FS3L200R10W3S7FB11BPSA1 SiC IGBT Modules 950 V, 200 A 3-level IGBT module

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Infineon FS3L200R10W3S7FB11BPSA1 SiC IGBT Modules 950 V, 200 A 3-level IGBT module

ManufacturerInfineon(View more products from this manufacturer)

ModelFS3L200R10W3S7FB11BPSA1

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Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 950 V

Collector-Emitter Saturation Voltage: 1.27 V

Continuous Collector Current at 25 C: 70 A

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