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Infineon FP200R12N3T7BPSA1 IGBT Silicon Modules 1200 V, 200 A PIM IGBT module | EMIN.CO.ID

Discrete & Power Modules
Infineon FP200R12N3T7BPSA1 IGBT Silicon Modules 1200 V, 200 A PIM IGBT module

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Infineon FP200R12N3T7BPSA1 IGBT Silicon Modules 1200 V, 200 A PIM IGBT module

ManufacturerInfineon(View more products from this manufacturer)

ModelFP200R12N3T7BPSA1

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Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 200 A

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