Infineon FF800R12KE7EHPSA1 IGBT Silicon Modules 1200 V, 800 A common emitter IGBT module
ManufacturerInfineon(View more products from this manufacturer)
ModelFF800R12KE7EHPSA1
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Technology: Si
Configuration: Dual
Mounting Style: Screw Mount
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
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