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Fall Time: 34 ns
Rise Time: 110 ns
Technology: SiC
Configuration: Dual
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Vf - Forward Voltage: 5.28 V
Pd - Power Dissipation: 20 mW
Vgs - Gate-Source Voltage: - 7 V, + 20 V
Typical Turn-On Delay Time: 78 ns
Typical Turn-Off Delay Time: 119 ns
Id - Continuous Drain Current: 105 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 5.8 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 5.15 V
