Infineon FF1MR12MM1HB11BPSA1 MOSFET Modules EconoDUAL 3 CoolSiC MOSFET 1200 V module

Width: 62.5 mm

Height: 20.5 mm

Length: 152 mm

Fall Time: 77 ns

Rise Time: 261 ns

Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Number of Channels: 2 Channel

Vf - Forward Voltage: 4.14 V

Pd - Power Dissipation: 20 mW

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 182 ns

Typical Turn-Off Delay Time: 319 ns

Id - Continuous Drain Current: 420 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 1.91 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.15 V