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Infineon FD1200R17KE3-K IGBT Silicon Modules N-CH 1.7KV 1.6KA

ModelFD1200R17KE3-K
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Width: 130 mm

Height: 38 mm

Length: 140 mm

Technology: Si

Unit Weight: 1.5 kg

Configuration: Single Dual Collector Dual Emitter

Mounting Style: SMD/SMT

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current at 25 C: 1.6 kA

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