Infineon F3L200R07W2S5FB11BOMA1 SiC IGBT Modules 650 V, 200 A 3-level IGBT module
ManufacturerInfineon(View more products from this manufacturer)
ModelF3L200R07W2S5FB11BOMA1
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Technology: Si
Configuration: 3-Phase Inverter
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.17 V
Continuous Collector Current at 25 C: 200 A
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