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Width: 5 mm
Height: 1.15 mm
Length: 6 mm
Fall Time: 1.4 ns, 2.6 ns
Rise Time: 4.3 ns, 4.7 ns
Technology: Si
Unit Weight: 112.200 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 5.6 nC, 20 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.5 W, 6.25 W
Vgs - Gate-Source Voltage: - 16 V, + 16 V
Typical Turn-On Delay Time: 4.3 ns, 5.6 ns
Typical Turn-Off Delay Time: 4.3 ns, 8.8 ns
Id - Continuous Drain Current: 50 A, 50 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 46 S, 90 S
Rds On - Drain-Source Resistance: 2.4 mOhms, 3.2 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
