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Infineon BFP 740FESD H6327 RF Silicon Germanium RF BI | EMIN.CO.ID

RF Transistors
Infineon BFP 740FESD H6327 RF Silicon Germanium RF BI

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Infineon BFP 740FESD H6327 RF Silicon Germanium RF BI

ManufacturerInfineon(View more products from this manufacturer)

ModelBFP 740FESD H6327

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Technology: SiGe

Unit Weight: 1.800 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 47 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 160 mW

Continuous Collector Current: 45 mA

DC Collector/Base Gain hfe Min: 160

Collector- Emitter Voltage VCEO Max: 4.2 V

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