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Infineon BFP 650 H6327 RF Silicon Germanium RF BIP TRANSISTOR | EMIN.CO.ID

RF Transistors
Infineon BFP 650 H6327 RF Silicon Germanium RF BIP TRANSISTOR

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Infineon BFP 650 H6327 RF Silicon Germanium RF BIP TRANSISTOR

ManufacturerInfineon(View more products from this manufacturer)

ModelBFP 650 H6327

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Technology: SiGe

Unit Weight: 31 mg

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 37 GHz

Pd - Power Dissipation: 500 mW (1/2 W)

Emitter- Base Voltage VEBO: 1.2 V

Continuous Collector Current: 150 mA

Collector- Emitter Voltage VCEO Max: 4 V

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