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Infineon BAT60BE6327HTSA1 Schottky Diodes Silicon Schottky Diode

ModelBAT60BE6327HTSA1
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Technology: Si

Unit Weight: 4.500 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

If - Forward Current: 3 A

Ir - Reverse Current: 10 uA

Vf - Forward Voltage: 480 mV

Vr - Reverse Voltage: 10 V

Pd - Power Dissipation: 1.35 W

Ifsm - Forward Surge Current: 5 A

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 10 V

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