Infineon BAR 88-02V H6327 Switching Diode RF DIODE
ManufacturerInfineon(View more products from this manufacturer)
ModelBAR 88-02V H6327
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Technology: Si
Unit Weight: 1.670 mg
Carrier Life: 500 ns
Qualification: AEC-Q100
Mounting Style: SMD/SMT
If - Forward Current: 100 mA
Ir - Reverse Current: 50 nA
Vf - Forward Voltage: 1.2 V
Vr - Reverse Voltage: 80 V
Pd - Power Dissipation: 250 mW
Maximum Diode Capacitance: 0.4 pF
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Maximum Series Resistance @ Maximum IF: 2.5 Ohms
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