Infineon FS50R07W1E3_B11A IGBT Silicon Modules EASY PACK SI
ManufacturerInfineon(View more products from this manufacturer)
ModelFS50R07W1E3_B11A
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Technology: Si
Unit Weight: 24 g
REACH - SVHC: Details
Configuration: 6-Pack
Mounting Style: Through Hole
Pd - Power Dissipation: 205 W
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 70 A
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