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Fall Time: 25 ns
Rise Time: 61 ns
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 45.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 83.3 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 37 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 89 S
Rds On - Drain-Source Resistance: 1.17 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
