Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 3.93 mm
Height: 4.7 mm
Length: 4.7 mm
Technology: Si
Unit Weight: 200 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 625 mW
DC Current Gain hFE Max: 300
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 75 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 1 V
