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Width: 4 mm
Height: 1.5 mm
Length: 10 mm
Technology: Si
Unit Weight: 143 mg
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 250 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 75
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 300 mV
