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Width: 4.7 mm
Height: 9.4 mm
Length: 10.1 mm
Technology: Si
Unit Weight: 1.800 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 30 W
DC Current Gain hFE Max: 300
Gain Bandwidth Product fT: 3 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 60
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 400 mV
