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Width: 5 mm
Height: 1.05 mm
Length: 6 mm
Technology: Si
Unit Weight: 90 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: N-Channel
Qg - Gate Charge: 72 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 125 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 31 ns
Id - Continuous Drain Current: 24 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 60 s
Rds On - Drain-Source Resistance: 4 mOhms
Vds - Drain-Source Breakdown Voltage: 80 V
Vgs th - Gate-Source Threshold Voltage: 3.4 V
