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Width: 5.1 mm
Height: 1.1 mm
Length: 6.25 mm
Fall Time: 16 ns
Rise Time: 22 ns
Technology: Si
Unit Weight: 56.500 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 204 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 180 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 29 ns
Typical Turn-Off Delay Time: 87 ns
Id - Continuous Drain Current: 423 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 333 S
Rds On - Drain-Source Resistance: 650 uOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
