Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 4.5 mm
Height: 0.8 mm
Length: 5 mm
Fall Time: 1.9 ns, 2.7 ns
Rise Time: 1.3 ns, 2.8 ns
Technology: Si
Unit Weight: 210 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 5 nC, 19 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 2.5 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 3.4 A, 2.6 A
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 6 S
Rds On - Drain-Source Resistance: 110 mOhms, 190 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V, 80 V
Vgs th - Gate-Source Threshold Voltage: 3 V, 1.6 V
