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Width: 4.19 mm
Height: 5.33 mm
Length: 5.2 mm
Technology: Si
Unit Weight: 240 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 250 mV
