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Fall Time: 35 ns
Rise Time: 38 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Transistor Type: 1 N-Channel
Qg - Gate Charge: 269 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 340 W
Vgs - Gate-Source Voltage: - 4 V, + 18 V
Typical Turn-On Delay Time: 150 ns
Typical Turn-Off Delay Time: 108 ns
Id - Continuous Drain Current: 120 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 41.5 S
Rds On - Drain-Source Resistance: 22.3 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
