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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 730 mW
DC Current Gain hFE Max: 500 at - 10 mA, -2 V
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 115 V
Continuous Collector Current: - 1 A
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 200 at - 10 mA, - 2 V
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 150 mV
