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Width: 2.6 mm
Height: 1.6 mm
Length: 4.6 mm
Technology: Si
Unit Weight: 52 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 19.2 W
DC Current Gain hFE Max: 1500 at - 10 mA, - 2 V
Gain Bandwidth Product fT: 310 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: - 4.5 A
Maximum DC Collector Current: 4.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 40 at -4.5 A, - 2 V
Collector- Emitter Voltage VCEO Max: 12 V
Collector-Emitter Saturation Voltage: 200 mV
