Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.4 mm
Height: 1.02 mm
Length: 3.04 mm
Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 330 mW
DC Current Gain hFE Max: 80 at 1 mA, 5 V
Gain Bandwidth Product fT: 130 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Maximum DC Collector Current: 600 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 115 mV
