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Fall Time: 2.9 ns
Rise Time: 2.3 ns
Technology: Si
Unit Weight: 750 mg
Channel Mode: Enhancement
Configuration: Quad
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel, 2 P-Channel
Qg - Gate Charge: 3.9 nC, 5.2 nC
Number of Channels: 4 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 10.9 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 2.72 A, 2.06 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 180 mOhms, 330 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V, 3 V
